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| SS1H9 and SS1H10 New Product Vishay Semiconductors formerly General Semiconductor DO-214AC (SMA) High Voltage Surface Mount Schottky Rectifier Cathode Band 0.110 (2.79) 0.100 (2.54) Reverse Voltage 90 to 100V Forward Current 1.0A 0.065 (1.65) 0.049 (1.25) Mounting Pad Layout 0.177 (4.50) 0.157 (3.99) 0.066 MIN. (1.68 MIN.) 0.012 (0.305) 0.006 (0.152) 0.074 MAX. (1.88 MAX.) Dimensions in inches and (millimeters) 0.090 (2.29) 0.078 (1.98) 0.060 MIN. (1.52 MIN.) 0.008 (0.203) MAX. 0.208 (5.28) 0.194 (4.93) 0.060 (1.52) 0.030 (0.76) 0.208 (5.28) REF Mechanical Data Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250C/10 seconds at terminals Polarity: Color band denotes cathode end Weight: 0.002oz., 0.064g Features * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Low profile surface mount package * Built-in strain relief * Low power loss, high efficiency * For use in low voltage high frequency inverters, free wheeling, and polarity protection applications * Guardring for overvoltage protection Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Device marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Peak repetitive reverse surge current at tp = 2.0s, 1KHZ Maximum thermal resistance(2) Storage temperature range Maximum operating temperature VRRM VRMS VDC IF(AV) IFSM IRRM RJA RJL TSTG TJ (TA = 25C unless otherwise noted) Symbol SS1H9 S9 90 63 90 1.0 50 1.0 88 30 SS1H10 S10 100 70 100 Unit V V V A A A C/W C C -55 to +175 175 Electrical Characteristics Maximum instantaneous forward voltage at: (1) IF = IF = IF = IF = 1.0A, 1.0A, 2.0A, 2.0A, TJ = TJ = TJ = TJ = 25C 125C 25C 125C VF 0.77 0.62 0.86 0.70 1.0 0.5 V A mA Maximum DC reverse current at rated DC blocking voltage(1) TJ = 25C TJ = 125C IR Notes: (1) Pulse test: 300s pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0mm) copper pad areas Document Number 88747 16-Aug-04 www.vishay.com 1 SS1H9 and SS1H10 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Peak Forward Surge Current (A) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current 60 1.2 1 0.8 0.6 0.4 0.2 0 40 20 0 25 50 75 100 125 150 175 200 1 10 100 CaseTemperature (C) Number of Cycles at 60 HZ Fig. 3 - Typical Instantaneous Forward Characteristics 100 10000 Fig. 4 - Typical Reverse Characteristics Instantaneous Reverse Current (A) 1000 TJ = 150C 100 10 1 0.1 0.01 0.001 20 TJ = 25C 40 60 80 100 TJ = 125C TJ = 100C 10 TJ = 175C 1 TJ = 150C TJ = 12C TJ = 100C 0.1 TJ = 25C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 10000 100 Fig. 6 - Typical Transient Thermal Transient Thermal Impedance (C/W) 1000 10 100 1 10 0.1 1 10 100 0.1 0.01 0.1 1 10 Reverse Voltage (V) www.vishay.com 2 t, Pulse Duration (sec.) Document Number 88747 16-Aug-04 |
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